MJE5740(2002) Просмотр технического описания (PDF) - ON Semiconductor
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MJE5740 Datasheet PDF : 8 Pages
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MJE5740 MJE5742
TYPICAL CHARACTERISTICS
100
IC(pk)
VCE(pk)
80
SECOND BREAKDOWN DERATING
90% VCE(pk) 90% IC
IC
tsv
trv
tfi
tti
60
THERMAL DERATING
40
VCE
IB
90% IB1
tc
10% VCE(pk)
10%
IC(pk) 2% IC
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
2000
1000
VCE = 5 V
150°C
+ā25°C
-ā55°C
100
10
0.1
1
2
5
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
TIME
Figure 2. Inductive Switching Measurements
2.4
2.2
hFE = 20
2
1.8
-ā55°C
1.6
1.4
+ā25°C
1.2
1
+150°C
0.8
0.6
0.4
0.2
0.5
1
2
5
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
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