D313 Просмотр технического описания (PDF) - Usha Ltd

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производитель

D313

NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.

Usha Ltd  

ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]

Characteristic

Symbol Min Typ Max Unit

* OFF CHARACTERISTICS :

Collector–Emitter Breakdown Voltage VCEO(sus) 60

[ Ic =50 mAdc, IB = 0 ]

Collector Cutoff Current

ICB0

[ VCB =20 Vdc, IB = 0 ]

Collector–Base Breakdown

[ Ic =1mAdc, IE = 0 ]

Emitter Cutoff Current

[VEB=5Vdc, IC=0]

Voltage BVCBO 60

IEBO

* ON CHARACTERISTICS (1):

DC Current Gain

[ Ic = 0.1 Adc , VCE = 2.0 Vdc ]

[ Ic =2 Adc , VCE =2.0 Vdc ]

Collector-Emitter Saturation Voltage

[ Ic = 2Adc , IB = 0.2Adc )

hFE

40

40

VCE(sat)

Emitter–Base Saturation

[ Ic =1Adc, VCE =2V ]

Voltage

VBE(ON)

Vdc

100 µAdc

Vdc

100 µAdc

320

1

Vdc

1

Vdc

DYNAMIC CHARACTERISTICS :

Current Gain – Bandwidth Product

fT

8

[Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ]

MHz

• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%

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