ZTX1047A Просмотр технического описания (PDF) - Zetex => Diodes
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ZTX1047A Datasheet PDF : 4 Pages
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ZTX1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 35
55
Voltage
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
35
55
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
10
14
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
35
55
V
IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
8.7
Voltage
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
ICBO
IEBO
ICES
0.3
10
0.3
10
0.3
10
nA
VCB=20V
nA
VEB=4V
nA
VCES=20V
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
23
40
mV
IC=0.5A, IB=10mA*
44
70
mV
IC=1A, IB=10mA*
120
185
mV
IC=3A, IB=10mA*
130
190
mV
IC=4A, IB=20mA*
860
950
mV
IC=4A, IB=20mA*
Base-Emitter Turn-On
Voltage
VBE(on)
810
900
mV
IC=4A, VCE=2V*
Static Forward Current
hFE
Transfer Ratio
Transition Frequency
fT
280
440
300
450
1200
240
380
150
230
60
110
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
IC=20A, VCE=2V*
150
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
85
110
pF
VCB=10V, f=1MHz
ton
Switching Times
toff
130
ns
IC=4A, IB=40mA, VCC=10V
180
ns
IC=4A, IB=±40mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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