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MRF949T1

NPN Silicon Low Noise Transistor

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF Line

NPN Silicon

Low Noise Transistors

Motorola’s MRF949 is a high performance NPN transistor designed for use in

high gain, low noise small–signal amplifiers. The MRF949 is well suited for low

voltage wireless applications. This device features a 9 GHz DC current

gain–bandwidth product with excellent linearity.

• Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA

• High Current Gain–Bandwidth Product, ft = 9 GHz @ 15 mA

• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA

• Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA

• Fully Ion–Implanted with Gold Metallization and Nitride Passivation

• Available in Tape and Reel Packaging Options:

T1 Suffix = 3,000 Units per Reel

Order this document

by MRF949T1/D

MRF949T1

ICmax = 50 mA

LOW NOISE

TRANSISTORS

CASE 463–01, STYLE 1

(SC–90)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Power Dissipation (1) TC = 75°C

Derate linearly above TC = 75°C @

Collector Current — Continuous (2)

Maximum Junction Temperature

Storage Temperature

Thermal Resistance, Junction to Case

DEVICE MARKINGS

VCEO

VCBO

VEBO

PDmax

IC

TJmax

Tstg

RθJC

10

20

1.5

0.144

1.92

50

150

– 55 to +150

520

Vdc

Vdc

Vdc

Watts

mW/°C

mA

°C

°C

°C/W

MRF949T1 = JL

(1) To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature is measured on collector lead adjacent to the package

body.

(2) IC — Continuous (MTBF > 10 years).

©MMOotoTrOolaR, OIncL.A19R98F DEVICE DATA

MRF949T1

1

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