2SD2114K(1996) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

2SD2114K
(Rev.:1996)

High-current Gain Medium Power Transistor (20V, 0.5A)

ROHM Semiconductor 

Transistors

High-current Gain Medium

Power Transistor (20V, 0.5A)

2SD2114K / 2SD2144S

FFeatures

1) High DC current gain.

hFE = 1200 (Typ.)

2) High emitter-base voltage.

VEBO = 12V (Min.)

3) Low VCE(sat).

VCE(sat) = 0.18V (Typ.)

(IC / IB = 500mA / 20mA)

FStructure

Epitaxial planar type

NPN silicon transistor

FExternal dimensions (Units: mm)

232

(96-232-C107)

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