STF715 - STN715
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-ambient
• Device mounted on a PCB area of 1 cm2.
Max
SOT-223
78
SOT-89
89
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = 140 V
VCE = 80 V
VEB = 5 V
IC = 10 mA
IC = 100 mA
IC = 1 A
IB = 10 mA
IB = 100 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 100 mA
IC = 1 A
IB = 10 mA
IB = 100 mA
hFE∗ DC Current Gain
IC = 100 mA
IC = 500 mA
IC = 1 A
VCE = 2 V
VCE = 2 V
VCE = 2 V
fT
Transition Frequency IC = 0.1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 10 V
Min. Typ.
80
140
80
40
50
Max.
500
1
100
0.25
0.5
1
1.1
Unit
µA
mA
µA
V
V
V
V
V
MHz
2/5