Samsung

N-CHANNEL POWER MOSFETS

ARTSCHIP ELECTRONICS CO.,LMITED.

N-Channel Power MOSFETs 10A, 350V/400V

Samsung

N-Channel Power MOSFETs

International Rectifier

Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A

Inchange Semiconductor

N-Channel MOSFET Transistor

ARTSCHIP ELECTRONICS CO.,LMITED.

N-Channel Power MOSFETs, 3.0A, 350-400V

International Rectifier

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE -TO-3 (TO-204AE)

Samsung

N-CHANNEL POWER MOSFETS

Motorola => Freescale

NPN Silicon RF Power Transistor

New Jersey Semiconductor

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Inchange Semiconductor

N-Channel MOSFET Transistor

Fairchild Semiconductor

N-Channel Power MOSFETs 10A/ 350V/400V

Motorola => Freescale

The RF Line NPN Silicon RF Power Transistors

Tyco Electronics

NPN Silicon RF Power Transistor