PTFB213004FV2R250
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Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Match & Start : PTFB213004FV2R250
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
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