PTFB201402FC-V1-R250
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Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Match & Start : PTFB201402FC-V1-R250
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
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