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FD3055

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включая
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итог
Fairchild Semiconduc...
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Fairchild
Fairchild Semiconductor
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
PDF
Intersil
Intersil
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
PDF
Match & Start : FD3055
NJSEMI
New Jersey Semiconductor
HIGH CONDUCTANCE LOW LEAKAGE DIFFUSED SILICON PLANAR DIODE
Mitsubishi
MITSUBISHI ELECTRIC
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE
Infineon
Infineon Technologies
62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode
Infineon
Infineon Technologies
EconoPACK™4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC
EUPEC
eupec GmbH
IGBT-Modules
Infineon
Infineon Technologies
IGBT-Modules
Infineon
Infineon Technologies
62mm C-series module with the fast IGBT2 for high-frequency switching
EUPEC
eupec GmbH
62mm C-series module with the fast IGBT2 for high-frequency switching
Infineon
Infineon Technologies
62mm C-series module with the fast IGBT2 for high-frequency switching
Infineon
Infineon Technologies
62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and pre-applied Thermal Interface Material
Fairchild
Fairchild Semiconductor
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
Intersil
Intersil
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
ST-Microelectronics
STMicroelectronics
100 V field-effect rectifier diode
ST-Microelectronics
STMicroelectronics
100 V field-effect rectifier diode
ST-Microelectronics
STMicroelectronics
100 V field-effect rectifier diode
ST-Microelectronics
STMicroelectronics
100 V field-effect rectifier diode
1
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