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FB11N50A

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FB11N50A(2)
начиная
N/A
концы
N/A
включая
*FB11N50A-*(1)
*FB11N50AP*(1)
*HFB11N50A*(2)
*RFB11N50A*(2)
производитель
итог
International Rectif...
Vishay Semiconductor...
производитель
Номер в каталоге
Компоненты Описание
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IR
International Rectifier
FB11N50A
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
PDF
Vishay
Vishay Semiconductors
FB11N50A
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
PDF
Match & Start : FB11N50A
Vishay
Vishay Semiconductors
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Power MOSFET, 190 A
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Vishay
Vishay Semiconductors
FB190SA10_2018
Power MOSFET, 190 A
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NEC
NEC => Renesas Technology
FB1A4M-T1B
COMPOUND TRANSISTOR
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Infineon
Infineon Technologies
FB15R06W1E3_2009
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
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Infineon
Infineon Technologies
FB10R06W1E3
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
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EUPEC
eupec GmbH
FB10R06KL4G
IGBT-Modules
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Infineon
Infineon Technologies
FB15R06W1E3
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
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EIC
Electronics Industry
FB125-C1000G_1998
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
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EIC
Electronics Industry
FB125-C1500G
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
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EIC
Electronics Industry
FB125-C1000G
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
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EIC
Electronics Industry
FB125-C1500RG
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
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EUPEC
eupec GmbH
FB10R06KL4GB1
IGBT-Modules
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