MJW16212 Просмотр технического описания (PDF) - Motorola => Freescale

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MJW16212

SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

Motorola => Freescale 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJW16212

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Min

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 1500 V, VBE = 0 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 1200 V, VBE = 0 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc)

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 10 A, VCE = 5.0 Vdc)

ICES

—

—

IEBO

—

V(BR)EBO

8.0

VCEO(sus)

650

VCE(sat)

—

—

VBE(sat)

—

hFE

—

4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 µH)

tds

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 10 Vdc, IE = 0, ftest = 100 kHz)

Cob

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Gain Bandwidth Product

(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)

fT

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Turn–Off Energy

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (EB(avalanche) = 500 ns, RBE = 22 Ω)

EB(off)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Heatsink Capacitance — MJF16212 Isolated Package

Cc–hs

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, ftest = 100 kHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inductive Load (IC = 5.5 A, IB = 2.2 A), High Resolution Deflection

Simulator Circuit Table 2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v (2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.

tsv

—

tfi

—

Typ

Max

Unit

—

250

µAdc

—

25

—

25

µAdc

11

—

Vdc

—

—

Vdc

0.15

1.0

Vdc

0.14

1.0

0.9

1.5

Vdc

24

—

—

6.0

10

350

—

ns

180

350

pF

2.75

—

MHz

35

—

µJ

5.0

—

pF

ns

2000

200

4000

350

SAFE OPERATING AREA

100

50

20

10

5

2

1

0.5

0.2

0.1

0.05

0.02

0.01

1

10 µs

MJH16212

100

5 ms

ns

II

DC

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

TJ = 25°C

2 3 5 7 10 20 30 50 70100 200 300 500700 1K

VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 1. Maximum Forward Bias

Safe Operating Area

18

IC/IB = 5

14

TJ ≤ 100°C

10

6

2

0

300

600

900

1200 1500

VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 2. Maximum Reverse Bias

Safe Operating Area

3–2

Motorola Bipolar Power Transistor Device Data

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