BFG93 Просмотр технического описания (PDF) - Philips Electronics
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BFG93 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 6 GHz wideband transistors
Product specification
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
total power dissipation
storage temperature range
Ts ≤ 85 °C; note 1
junction operating temperature
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
15
12
2
35
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
IE = 0; VCB = 5 V
IC = 30 mA; VCE = 5 V
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 5 V; f = 1 MHz
IC = ic = 0; VCB = 5 V; f = 1 MHz
IC = 30 mA; VCE = 5 V; f = 500 MHz
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 1 GHz
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 2 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
MIN.
−
40
−
−
−
4.5
−
TYP.
−
90
0.9
1.9
0.6
6
16
MAX.
50
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
−
10
−
dB
−
1.7 −
dB
−
2.3 −
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
=
10
log --(--1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
1998 Sep 23
3
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