BSR57 Просмотр технического описания (PDF) - Philips Electronics
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производитель
BSR57 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel FETs
Product specification
BSR56; BSR57; BSR58
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Forward gate current
Total power dissipation up to Tamb = 40 °C (note 1)
Storage temperature range
Junction temperature
± VDS
VDGO
−VGSO
IGF
Ptot
Tstg
Tj
max. 40 V
max. 40 V
max. 40 V
max. 50 mA
max. 250 mW
−65 to +150 °C
max. 150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Notes
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
Rth j-a
=
430 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate-source cut-off current
VDS = 0 V; −VGS = 20 V
Drain cut-off current
VDS = 15 V; −VGS = 10 V
Drain current
VDS = 15 V; VGS = 0
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
Gate-source cut-off voltage
ID = 0,5 nA; VDS = 15 V
Drain-source voltage (on)
ID = 20 mA; VGS = 0
ID = 10 mA; VGS = 0
ID = 5 mA; VGS = 0
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0; Ta = 25 °C
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS = 0
>
IDSS
<
−V(BR)GSS >
>
−V(P)GS
<
VDSon
<
VDSon
<
VDSon
<
rds on
<
Crss
<
−IGSS
max.
1.0 nA
IDSX
max.
1.0 nA
BSR56 BSR57 BSR58
50
20
−
100
8 mA
80 mA
40
40
40 V
4
2
0.8 V
10
6
4V
750
−
− mV
−
500
− mV
−
−
400 mV
25
40
60 Ω
5
5
5 pF
April 1991
3
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