STN1NC60 Просмотр технического описания (PDF) - STMicroelectronics
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STN1NC60 Datasheet PDF : 8 Pages
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STN1NC60
THERMAL DATA
Rthj-pcb Thermal Resistance Junction-PC Board
50
Rthj-amb Thermal Resistance Junction-ambient Max
60
(Surface Mounted)
Tl
Maximum Lead Temperature For Soldering Purpose
260
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
0.3
60
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID =0.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
12
Max.
4
15
Unit
V
Ω
1
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
0.87
108
18
2.5
Max.
Unit
S
pF
pF
pF
2/8
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