CHM3055LAPAPT Просмотр технического описания (PDF) - CHENMKO CO., LTD.

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CHM3055LAPAPT

SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHM3055LAPAPT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

I GSSF

I GSSR

Gate-Body Leakage

Gate-Body Leakage

VGS = 0 V, ID = 250 µA

VDS = 30 V, VGS = 0 V

VGS = 20V,VDS = 0 V

VGS = -20V, VDS = 0 V

30

V

1

µA

+100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

g FS

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS=10V, ID=12A

VGS=5V, ID=12A

VDS =10V, ID = 12A

0.8

2.5

V

45 60

mΩ

70 90

20

S

SWITCHING CHARACTERISTICS (Note 4)

Qg Total Gate Charge

Qgs Gate-Source Charge

Q gd Gate-Drain Charge

t on

Turn-On Time

tr

Rise Time

t off

Turn-Off Time

tf

Fall Time

VDS=15V, ID=6A

VGS=10V

VDD= 15V

ID =12A, VGS= 10 V

RGEN= 2.5 Ω

10 15

2

nC

3

12 25

5 15

nS

14 30

14 30

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Drain-Source Diode Forward Current

V SD

Drain-Source Diode Forward Voltage IS = 12A, VGS= 0 V

12

A

0.9 1.3 V

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