MJE13007VB Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

MJE13007VB

Silicon NPN transistor in a TO-263 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJE13007VB

Rev.A May.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Base Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

700

400

9.0

8.0

16

4.0

2

80

150

-55～150

单位

Unit

V

V

V

A

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Base Cut-Off Current

Collector Cut-Off Current

Collector cut-off current

Emitter Base Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

Output Capacitance

Transition Frequency

Fall time

Storage time

符号

Symbol

测试条件

Test Conditions

VCBO IC=1mA

IE=0

VCEO

VEBO

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

VCE(sat)(1)

VCE(sat)(2)

VCE(sat)(3)

VBE(sat)(1)

VBE(sat)(2)

Cob

fT

tf

tS

IC=10mA

IE=1mA

VCB=700V

VCE=400V

VEB=9.0V

VCE=5.0V

VCE=5.0V

IC=5.0A

IC=2.0A

IC=8.0A

IC=5.0A

IC=2.0A

VCB=10V

VCE=10V

f=1MHz

VCE=5V

(UI9600)

IB=0

IC=0

IE=0

IB=0

IC=0

IC=2.0A

IC=5.0A

IB=1.0A

IB=0.4A

IB=2.0A

IB=1.0A

IB=0.4A

f=1MHz

IC=0.5A

IC=0.5A

最小值 典型值 最大值 单位

Min Typ Max Unit

700

V

400

V

9.0

V

0.1 mA

0.1 mA

0.1 mA

10

40

5.0

30

0.9 V

0.6 V

2.0 V

1.5 V

1.1 V

110

pF

8

MHz

0.6 μs

3

9 μs

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