S8050 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
S8050 Datasheet PDF : 4 Pages
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Typical Characteristics
140
120
100
80
60
40
20
0
0.0
1000
Static Characteristic
500uA
450uA
400uA
COMMON
EMITTER
Ta=25℃
350uA
300uA
250uA
200uA
150uA
100uA
IB=50uA
0.5
1.0
1.5
2.0
2.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
——
CEsat
I
C
h —— I
1000
FE
C
COMMON EMITTER
VCE=1V
Ta=100℃
300
Ta=25℃
100
30
10
1
3
10
30
100
300
1000 1500
COLLECTOR CURRENT IC (mA)
V
—— I
BEsat
C
1.2
300
100
30
10
3
1
1
1500
1000
300
100
30
10
3
1
0.2
1000
300
100
30
10
3
1
1
Ta=100℃
Ta=25℃
3
10
30
100
300
COLLECTOR CURRENT IC (mA)
V —— I
BE
C
β=10
1000 1500
Ta=100℃
Ta=25℃
COMMON EMITTER
VCE=1V
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE VBE (V)
f
T
——
I
C
3
10
30
COLLECTOR CURRENT IC (mA)
VCE=10V
Ta=25℃
100
1.0
0.8
0.6
0.4
0.2
1
200
100
30
10
Ta=25℃
Ta=100℃
β=10
3
10
30
100
300
COLLECTOR CURRENT IC (mA)
1000 1500
C /C
ob ib
——
V /V
CB EB
Cib
f=1MHz
IE=0/IC=0
Ta=25℃
Cob
3
1
0.1
350
300
250
200
150
100
50
0
0
0.3
1
3
REVERSE VOLTAGE V (V)
P —— T
C
a
10
20
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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