MMBTA42 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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производитель

MMBTA42

NPN High Voltage Amplifier

Shenzhen Luguang Electronic Technology Co., Ltd 

MMBTA42

NPN High Voltage Amplifier

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Symbol Parameter

Test conditions

MIN. MAX. UNIT

V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0

300

-V

V(BR)CEO Collector-emitter breakdown voltage IC=1.0mA,IB=0

300

-V

V(BR)EBO Emitter-base breakdown voltage

IE=100μA,IC=0

6

-V

ICBO

collector cut-off current

IE = 0; VCB = 200V

-

0.1 μA

IEBO

emitter cut-off current

IC = 0; VEB = 6V

-

0.1 μA

hFE

DC current gain

VCE =10V; IC=1mA

VCE =10V;IC =10mA

VCE =10V;IC =30mA

25

-

40

-

40

-

VCE(sat)

collector-emitter saturation voltage IC =20mA; IB =2mA

-

0.5 V

VBE(sat)

base-emitter saturation voltage

IC =20mA; IB=2mA

-

0.9 V

Cob

Collector output capacitance

VCB=20V,IE=0;f=1.0MHz

fT

transition frequency

IC=10mA; VCE =20V

50

f=100MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

3.0 pF

- MHz

Revision:20170701-P1

http://www.lgesemi.com

mail:lge@lgesemi.com

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