MMBTA42 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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MMBTA42 Datasheet PDF : 3 Pages
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MMBTA42
NPN High Voltage Amplifier
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
A
z Epitaxial planar die construction.
z Complementary PNP type available
K
(MMBTA92).
z Ideal for medium power amplification and switching.
D
G
APPLICATIONS
C
z NPN High voltage amplifier.
E
B
J
H
ORDERING INFORMATION
Type No.
Marking
MMBTA42
1D
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
Collector-base voltage
300
Value
VCEO
Collector-emitter voltage
300
VEBO
IC
PD
RθJA
Tj ,Tstg
Emitter-base voltage
Collector current (DC)
Total device dissipation
Thermal resistance,junction to ambient
Junction and storage temperature
6
0.2
0.35
357
-55 to +150
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
UNIT
V
V
V
A
W
°C/W
°C
Revision:20170701-P1
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mail:lge@lgesemi.com
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