AO3400A Просмотр технического описания (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
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производитель
AO3400A Datasheet PDF : 6 Pages
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
AO3400A
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=4A
VGS=4.5V, ID=5A
VGS=10V, ID=5.8A
VDS=5V,ID=5A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V, RL=2.7Ω
VGS=10V,RGEN=3Ω
VDS=15V,ID=5.8A,
VGS=4.5V
VGS=0V,IS=5.8A
-
-
±100
nA
0.7 0.9
1.4
V
- 45 59
mΩ
- 31 45
mΩ
- 28 41
mΩ
10
-
-
S
- 820
-
PF
-
99
-
PF
-
77
-
PF
-
3.3
-
nS
-
4.8
-
nS
-
26
-
nS
-
4
-
nS
-
9.5
-
nC
-
1.5
-
nC
-
3
-
nC
-
-
1.2
V
-
-
5.8
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Rev : 01.06.2014
2/6
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