SIHFS11N50ATL Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SIHFS11N50ATL

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFS11N50A, SiHFS11N50A

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

+- VDD

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T.

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91286

S-Pending-Rev. A, 22-Jul-08

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

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