SIHFS11N50ATL Просмотр технического описания (PDF) - Vishay Semiconductors
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SIHFS11N50ATL Datasheet PDF : 8 Pages
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IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
52
13
18
Single
0.52
D
D2PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFS11N50APbF
SiHFS11N50A-E3
SnPb
IRFS11N50A
SiHFS11N50A
Note
a. See device orientation.
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
D2PAK (TO-263)
IRFS11N50ATRRPbFa
SiHFS11N50ATR-E3a
-
-
D2PAK (TO-263)
IRFS11N50ATRLPbFa
SiHFS11N50ATL-E3a
IRFS11N50ATRLa
SiHFS11N50ATLa
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, RG = 25 Ω, IAS = 5.5 A (see fig. 12).
c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91286
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
LIMIT
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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