BT134-600E Просмотр технического описания (PDF) - WeEn Semiconductors

Номер в каталоге

Компоненты Описание

производитель

BT134-600E

4Q Triac

WeEn Semiconductors 

BT134-600E

4Q Triac

Rev.01 - 27 April 2018

Product data sheet

1. General description

Planar passivated sensitive gate four quadrant triac in a SOT82 (SIP3) plastic package intended

for use in general purpose bidirectional switching and phase control applications.This "series E"

sensitive gate triac is intended to be interfaced directly to microcontrollers, logic integrated circuits

and other low power gate trigger circuits.

2. Features and benefits

• High blocking voltage capability

• Planar passivated for voltage ruggedness and reliability

• Sensitive gate

• Triggering in all four quadrants

• Direct interfacing to logic level ICs

• Direct interfacing to low power gate drive circuits

• Low holding current for low current loads and lowest EMI at commutation

• Compact package

3. Applications

• General purpose low power motor control

• Home appliances

• Industrial process control

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Absolute maximum rating

Conditions

VDRM

IT(RMS)

ITSM

Symbol

repetitive peak off-state

voltage

RMS on-state current

non-repetitive peak on-

state current

Parameter

full sine wave; Tmb ≤ 107 °C; Fig. 1;

Fig. 2; Fig. 3

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

Conditions

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 9

Values

Unit

600

V

4

A

25

A

Min Typ Max Unit

-

2.5 10

mA

-

4

10

mA

-

5

10

mA

-

11

25

mA

-

2.2 15

mA

Share Link: