LP9435ET1G Просмотр технического описания (PDF) - Leshan Radio Company,Ltd
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LP9435ET1G Datasheet PDF : 4 Pages
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LESHAN RADIO COMPANY, LTD.
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
-1
-3
V
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
46
60
mΩ
70
90
VDS=-15V,ID=-4.5A
4
7
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
1040
PF
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
420
PF
Crss
150
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
19
26
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6Ω
9
13
nS
74
105
nS
36
50
nS
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS=-15V,ID=-5.3A,VGS=-10V
22.5 29
nC
2
nC
6
nC
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=-1.7A
IS
-1.2
V
-1.9
A
Rev .O 2/4
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