HUML2020L3(2014) Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
HUML2020L3 Datasheet PDF : 7 Pages
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2SAR542F3
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
-30
V
VCEO
-30
V
VEBO
-6
V
IC
-3
A
ICP*1
-6
A
IB
-500
mA
PD*2
1.0
W
PD*3
2.1
W
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -100μA
-30 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
-30 -
-
V
Emitter-base breakdown voltage BVEBO IE = -100μA
-6
-
-
V
Collector cut-off current
ICBO VCB = -30V
-
- -100 nA
Emitter cut-off current
IEBO VEB = -4V
-
- -100 nA
Collector-emitter saturation voltage VCE(sat) IC = -1A, IB = -50mA
- -90 -200 mV
DC current gain
hFE VCE = -2V, IC = -500mA 200 - 500 -
Transition frequency
fT
VCE = -10V, IE = 100mA, -
f = 100MHz
240
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0mA,
f = 1MHz
-
40
-
pF
Turn-On time
Storage time
Fall time
ton*4 IC = -2.5A, VCC = -10V
-
45
-
ns
tstg*4 IB1 = -250mA
- 200 -
ns
tf*4 IB2 = 250mA
-
25
-
ns
*1 Pw=1ms 1PULSE
*2 Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm2).
*3 Pw=10ms
Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm2).
*4 SEE SWITCHING TIME TEST CIRCUIT
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20140128 - Rev.001
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