SIHF730ASTRL-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SIHF730ASTRL-GE3 Datasheet PDF : 11 Pages
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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102
VGS
Top 15 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
0.1
10-2
0.1
91046_01
4.5 V
20 µs Pulse Width
TC = 25 °C
1
10
102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
10
TJ = 150 °C
TJ = 25 °C
1
0.1
4.0
91046_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
10
8.0 V
7.0 V
6.0 V
5.5 V
1
5.0 V
Bottom 4.5 V
4.5 V
0.1
10-2
0.1
20 µs Pulse Width
TC = 150 °C
1
10
102
91046_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
2.5
ID = 5.5 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91046_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91046
S11-1048-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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