SIHFBC30AL-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SIHFBC30AL-GE3 Datasheet PDF : 12 Pages
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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
23
5.4
11
Single
I2PAK (TO-262) D2PAK (TO-263)
2.2
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3
Lead (Pb)-free
IRFBC30ASPbF
SiHFBC30AS-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHFBC30ASTRL-GE3a
IRFBC30ASTRLPbFa
SiHFBC30ASTL-E3a
D2PAK (TO-263)
SiHFBC30ASTRR-GE3a
IRFBC30ASTRRPbFa
SiHFBC30ASTR-E3a
I2PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c. ISD 3.6 A, dI/dt 170 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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