SIHFI9530G Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SIHFI9530G Datasheet PDF : 7 Pages
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SiHFI9530G
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
- 1.1
www.VBsemi.tw
10
TJ = 150 °C
TJ = 25 °C
1
- 1.4
- 1.7
- 2.0
ID = 250 μA
0.1
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1600
1200
Ciss
800
400
Coss
0 Crss
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
2.1
ID = 3.6 A
VGS = 10 V
1.7
VGS = 4.5 V
1.3
0.9
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
- 2.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
- 100
- 106
- 112
ID = 250 μA
- 118
- 124
- 130
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
10
8
6
4
2
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating
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4
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