PN3643 Просмотр технического описания (PDF) - Fairchild Semiconductor
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PN3643 Datasheet PDF : 4 Pages
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PN3643
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
30
60
5.0
500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
30
V(BR)CBO Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
ICES
Collector Cut-off Current
VCB = 50V, IE = 0
VCB = 50V, IE = 0, TA = 65°C
On Characteristics
hFE
DC Current Gain
VCE = 10V, IC = 150mA
100
VCE = 10V, IC = 500mA
20
VCE(sat) Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
Small Signal Characteristics
Cob
Output Capacitance
η
Collector Efficientcy
Gpe
Amplifier Power Gain
hfe
Small Signal Current Gain
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
VCB = 10V, f = 140KHz
VCE = 15V, f = 30MHz
60
RG = 140Ω, RL = 260Ω
VCE = 15V, f = 30MHz
10
RG = 140Ω, RL = 260Ω
IC = 50mA, VCE = 5.0V, f = 100MHz 2.5
Max.
50
1.0
300
0.22
8.0
Units
V
V
V
nA
µA
V
pF
%
dB
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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