ISC1864 Просмотр технического описания (PDF) - Inchange Semiconductor
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ISC1864 Datasheet PDF : 2 Pages
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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ISC1864
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 5mA ; VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 5mA ; VCE= 3V ; f= 2GHz
Cre
Feed-Back Capacitance
IE= 0 ; VCB= 3V; f= 1MHz
︱S21e︱2 Insertion Power Gain
IC= 5mA ; VCE= 3V; f= 2GHz
NF
Noise Figure
IC= 5mA ; VCE= 3V; f= 2GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
50
250
5.5 8.0
GHz
0.3 0.7 pF
5.5 7.5
dB
1.9 3.2 dB
hFE Classification
Class
R43
R44
R45
Marking R43
R44
R45
hFE
50-100 80-160 125-250
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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