ISC1864 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

ISC1864

Silicon NPN RF Transistor

Inchange Semiconductor 

isc Silicon NPN RF Transistor

INCHANGE Semiconductor

ISC1864

DESCRIPTION

·High fT

8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz

·Low Cre

0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz

·High ︱S21e︱2

7.5 dB TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz

·100% tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for VHF, UHF low noise amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

20

V

VCEO Collector-Emitter Voltage

10

V

VEBO Emitter-Base Voltage

1.5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

35

mA

0.15

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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