DTC143TG Просмотр технического описания (PDF) - Unisonic Technologies

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DTC143TG

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC143T

 TYPICAL CHARACTERISTICS

DC Current Gain vs. Collector Current

1000

500

VCE =5V

200

100

TA=100

25

50

-40

20

10

5

2

1

0.1 0.2 0.5 1 2

5 10 20 50 100

Collector Current, IC (mA)

NPN SILICON TRANSISTOR

Collector-Emitter Saturation Voltage vs.

Collector Current

1

Ic/IB=20

500m

200m

100m

50m

TA=100

25

-40

20m

10m

5m

2m

1m

0.1 0.2

0.5 1 2

5 10 20 50 100

Collector Current, IC (mA)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-059.G

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