DTC143TG(2012) Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

DTC143TG
(Rev.:2012)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC143T

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

100

mA

SOT-523

150

Collector Power Dissipation SOT-23/SOT-323

PC

200

mW

TO-92SP

550

Junction Temperature

Storage Temperature

TJ

TSTG

+150

℃

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Base Breakdown Voltage

BVCBO IC =50μA

50

Collector-Emitter Breakdown Voltage BVCEO IC =1mA

50

Emitter-Base Breakdown Voltage

BVEBO IE =50μA

5

Collector Cut-off Current

ICBO VCB=50V

Emitter Cut-off Current

IEBO VEB =4V

Collector-Emitter Saturation Voltage

VCE(SAT) IC =5mA, IB=0.25mA

DC Current Gain

hFE VCE=5V, IC=1mA

100

Input Resistance

R1

3.29

Transition Frequency

fT

Note: Transition frequency of the device.

VCE=10V, IE =5mA, f=100MHz (Note)

TYP

250

4.7

250

MAX UNIT

V

V

V

0.5 μA

0.5 μA

0.3 V

600

6.11 kΩ

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-059,F

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