PMBT2907 Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved

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PMBT2907

40V, 600 mA, PNP switching transistor

Nexperia B.V. All rights reserved 

Nexperia

PMBT2907

40V, 600 mA, PNP switching transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

VEBO

emitter-base voltage

open collector

IC

collector current

ICM

peak collector current

single pulse; tp ≤ 1 ms

IBM

peak base current

Ptot

total power dissipation

Tamb ≤ 25 °C

Tj

junction temperature

Tamb

ambient temperature

Tstg

storage temperature

Min Max Unit

-

-60 V

-

-40 V

-

-5

V

-

-600 mA

-

-800 mA

-

-200 mA

[1]

-

250 mW

-

150 °C

-65 150 °C

-65 150 °C

[1] Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

300

Ptot

(1)

(mW)

aaa-014677

200

100

0

-75

-25

25

75

125

175

Tamb (°C)

(1) FR4 PCB; standard footprint

Fig. 1. Power derating curve

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Rth(j-a)

PMBT2907

thermal resistance

from junction to

ambient

Product data sheet

Conditions

in free air

[1]

All information provided in this document is subject to legal disclaimers.

6 March 2015

Min Typ Max Unit

-

-

500 K/W

© Nexperia B.V. 2017. All rights reserved

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