SML80H14 Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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производитель

SML80H14

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Semelab - > TT Electronics plc  

SML80H14

TO–258 Package Outline.

Dimensions in mm (inches)

17.65 (0.695)

17.39 (0.685)

6.86 (0.270)

6.09 (0.240)

1.14 (0.707)

0.88 (0.035)

123

4.19 (0.165)

3.94 (0.155)

Dia.

Pin 1 – Drain

5.08 (0.200)

BSC

1.65 (0.065)

1.39 (0.055)

Typ.

Pin 2 – Source

3.56 (0.140)

BSC

Pin 3 – Gate

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

VDSS

ID(cont)

RDS(on)

800V

13.5A

0.580Ω

• Faster Switching

• Lower Leakage

• TO–258 Hermetic Package

D

G

S

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

Drain – Source Voltage

ID

Continuous Drain Current

IDM

Pulsed Drain Current 1

VGS

Gate – Source Voltage

VGSM

Gate – Source Voltage Transient

PD

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

TJ , TSTG

TL

IAR

EAR

EAS

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting TJ = 25°C, L = 14.27mH, RG = 25Ω, Peak IL = 13.5A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

800

13.5

54

±30

±40

250

2.0

–55 to 150

300

13.5

30

1300

V

A

A

V

W

W/°C

°C

A

mJ

6/99

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