DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBR560S Просмотр технического описания (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

Номер в каталоге
Компоненты Описание
производитель
MBR560S
SMC
Sangdest Microelectronic (Nanjing) Co., Ltd SMC
MBR560S Datasheet PDF : 4 Pages
1 2 3 4
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1379, Rev. A
MBR560S
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
Condition
@ 5A, Pulse, TJ = 25 °C
@ 5A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125°C
Typ.
0.62
0.56
-
15
Max.
0.67
-
0.15
Units
V
V
mA
-
mA
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to
Soldering Point
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJS
RθJC
wt
Condition
-
-
DC operation
DC operation
-
TO-277B
Specification
-55 to +150
-55 to +150
1.5
Units
°C
°C
°C/W
2.3
°C/W
0.08
g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]