MW7IC2750NBR1 Просмотр технического описания (PDF) - NXP Semiconductors.

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MW7IC2750NBR1

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 550 mA, TA = 25°C, 50 Ohm System) (continued)

f

MHz

S11

|S11|

∠φ

S21

|S21|

∠φ

S12

|S12|

∠φ

S22

|S22|

∠φ

3400

0.702

169.7

1.243

28.4

0.00230

54.4

0.982

171.3

3450

0.718

166.7

1.193

10.8

0.00211

62.5

0.947

170.1

3500

0.721

164.7

0.937

3.1

0.00233

24.3

0.976

173.0

3550

0.746

162.0

0.914

--7.9

0.00213

51.7

0.981

171.9

3600

0.758

158.9

0.857

--21.4

0.00236

55.6

0.978

171.1

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

12

RF Device Data

Freescale Semiconductor, Inc.

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