ZXMN6A07F Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXMN6A07F Datasheet PDF : 8 Pages
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ZXMN6A07F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
60
IDSS
IGSS
VGS(th)
1.0
Static Drain-Source On-Resistance (Note 10)
RDS(ON)
Forward Transconductance (Notes 10 and 12)
Diode Forward Voltage (Note 10)
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
gfs
2.3
VSD
0.8
trr
20.5
Qrr
21.3
Ciss
166
Coss
19.5
Crss
8.7
tD(on)
1.8
tr
1.4
tD(off)
4.9
tf
2.0
Total Gate Charge (Note 11)
Qg
1.65
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Qg
3.2
Qgs
0.67
Qgd
0.82
Notes:
10. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
Max
1
±100
3.0
0.250
0.350
0.95
Unit
Test Condition
V ID = 250µA, VGS = 0V
µA VDS = 60V, VGS = 0V
nA VGS =±20V, VDS = 0V
V
ID = 250µA, VDS = VGS
Ω
VGS = 10V, ID = 1.8A
VGS = 4.5V, ID = 1.3A
S VDS = 15V, ID = 1.8A
V TJ = +25°C, IS = 0.45A, VGS = 0V
ns TJ = +25°C, IF = 1.8A,
nC di/dt = 100A/µs
pF
VDD = 40V, VGS = 0V
f = 1.0MHz
ns VDD = 30V, ID = 1.8A,
RG 6.0Ω VGS = 10V
nC VDS = 30V, VGS = 5V,
ID = 1.8A
nC VDS = 30V, VGS = 10V,
ID = 1.8A
ZXMN6A07F
Document Number DS33547 Rev. 9 - 2
4 of 8
www.diodes.com
July 2015
© Diodes Incorporated
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