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BFT25A Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFT25A
NPN 5 GHz wideband transistor
Philips Electronics
BFT25A Datasheet PDF : 14 Pages
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Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
pot. unst.
region
1
stability
circle
0.5
2
MSG
7.7 dB
0.2
7 dB
+
j
0
−
j
0.2
0.5
1
5 dB
Γ
opt
F
min
= 2.4 dB
3 dB
2
5 10
5
10
∞
4 dB
10
0.2
6 dB
5
0.5
1
See
Table 10;
Z
o
= 50
Ω
.
Average gain parameter: MSG = 7.7 dB.
Fig 13. Noise circle figure.
2
mcd110
Table 10: Noise parameters
f (MHz)
V
CE
(V)
I
C
(mA)
2 000
1
1
F
min
(dB)
2.4
Γ
opt
(mag)
0.72
(ang)
26
R
n
/50
1.7
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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