Q62702-F1314 Просмотр технического описания (PDF) - Siemens AG

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производитель

Q62702-F1314

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12mA

• fT = 8GHz

F = 1.45dB at 900MHz

BFR 181

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFR 181 RFs

Q62702-F1314

1=B

2=E

3=C

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 91 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

12

20

20

2

20

2

175

150

- 65 ... + 150

- 65 ... + 150

≤ 335

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-11-1996

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