IRF830B Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.
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производитель
IRF830B Datasheet PDF : 9 Pages
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IRF830B/IRFS830B
Typical Characteristics
Top :
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
VGS = 20V
3
2
※ Note : T = 25℃
J
1
0
3
6
9
12
15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
1200
900
600
300
Ciss
Coss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
10
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
※ Note : I = 4.5 A
D
0
0
4
8
12
16
20
24
28
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
2014-8-10
3
www.kersemi.com
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