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MTB6N60E1 Datasheet PDF : 7 Pages
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MTB6N60E1
TMOS E−FET.™
High Energy Power FET
D2PAK−SL Straight Lead
N−Channel Enhancement−Mode Silicon
Gate
http://onsemi.com
This advanced TMOS E−FET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
D2PAK−SL
CASE 418C−01
Style 2
D
®
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage — Continuous
Gate−Source Voltage — Non−Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
600
600
± 20
± 40
6.0
4.6
18
125
1.0
2.5
− 55 to 150
405
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MTB6N60E1/D
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