2SA1036K Просмотр технического описания (PDF) - TY Semiconductor

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производитель

2SA1036K

Medium Power Transistor

TY Semiconductor 

Product specification

2SA1036K

■ Features

● Large IC. ICMax. = -500mA

● Low VCE(sat). Ideal for low-voltage operation.

SOT-23-3

2.9+0.2

-0.2

0.4+0.1

-0.05

3

1

2

0.95+0.1

-0.1

1.9+0.2

-0.2

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

P ara me ter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current *

Collector power dissipation

Junction temperature

Storage temperature

* PC max. must not be exceeded.

Sy m bol

Rating

Unit

VCB O

-4 0

V

VCE O

-3 2

V

V EB O

-5

V

IC

-0.5

A

PC

0.2

W

Tj

1 50

℃

Ts tg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Output capacitance

Transition frequency

Symbol

Testconditons

VCBO IC = -100 μA

VCEO IC = -1 mA

VEBO IE = -100 μA

ICBO VCB = -20 V

IEBO VEB = -4 V

VCE(sat) IC = -100 mA, IB = -10 mA

hFE VCE = -3 V, IC = -10mA

Cob VCB = -10 V, IE = 0A, f = 1MHz

fT VCE = -5 V, IE = 20 mA, f = 100MHz

Min Typ Max Unit

-40

V

-32

V

-5

V

-1 μA

-1 μA

-0.4 V

82

390

7

pF

200

MHz

■ hFE Classification

Marking

Rank

hFE

HP

P

82～180

HQ

Q

120～270

HR

R

180～390

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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