30CTQ040-M3 Просмотр технического описания (PDF) - Vishay Semiconductors

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30CTQ040-M3

High Performance Schottky Rectifier, 2 x 15 A

Vishay Semiconductors 

VS-30CTQ035-M3, VS-30CTQ040-M3, VS-30CTQ045-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 15 A

Base 2

common

cathode

3L TO-220AB

Anode

2

Anode

1 Common 3

cathode

PRIMARY CHARACTERISTICS

IF(AV)

VR

2 x 15 A

35 V, 40 V, 45 V

VF at IF

0.56 V

IRM max.

15 mA at 125 °C

TJ max.

EAS

175 °C

20 mJ

Package

3L TO-220AB

Circuit configuration

Common cathode

FEATURES

• 175 °C TJ operation

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified according to JEDEC®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The VS-30CTQ... center tap Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. The proprietary barrier technology allows for

reliable operation up to 175 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

IF(AV)

VRRM

IFSM

Rectangular waveform

tp = 5 μs sine

VF

15 Apk, TJ = 125 °C (per leg)

TJ

VALUES

30

35 to 45

1060

0.56

-55 to +175

UNITS

A

V

A

V

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

Maximum DC reverse voltage

Maximum working peak reverse voltage

VR

VRWM

VS-30CTQ035-M3

35

VS-30CTQ040-M3

40

VS-30CTQ045-M3

45

UNITS

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

Maximum average forward current 

See fig. 5

IF(AV)

Maximum peak one cycle non-repetitive

surge current per leg

IFSM

See fig. 7

Non-repetitive avalanche energy per leg EAS

Repetitive avalanche current per leg

IAR

TEST CONDITIONS

50 % duty cycle at TC = 127 °C, rectangular waveform

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

Following any rated load

condition and with rated

VRRM applied

TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical

VALUES

30

1060

265

20

3.0

UNITS

A

mJ

A

Revision: 17-Aug-17

1

Document Number: 96275

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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