MURF1620CTR(1995) Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.

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производитель

MURF1620CTR
(Rev.:1995)

16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

MURF1620CTR thru MURF1660CTR

Pb Free Plating Product

MURF1620CTR/MURF1640CTR/MURF1660CTR

Pb

16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

ITO-220AB/TO-220F-3L

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Unit : inch (mm)

.189(4.8)

.165(4.2)

.130(3.3)

.114(2.9)

.071(1.8)

.055(1.4)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.1

(2.55)

.1

(2.55)

.114(2.9)

.098(2.5)

.032(.8)

MAX

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CT"

Suffix "CTR"

Suffix "CTD"

Suffix "CTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL MURF1620CTR MURF1640CTR MURF1660CTR UNIT

Maximum Recurrent Peak Reverse Voltage VRRM

200

Maximum RMS Voltage

VRMS

140

Maximum DC Blocking Voltage

VDC

200

Maximum Average Forward Rectified

Current TC=100oC (Total Device 2x8A=16A)

IF(AV)

400

600

V

280

420

V

400

600

V

16.0

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

175

(JEDEC method)

150

A

Maximum Instantaneous Forward Voltage

VF

0.98

1.3

@ 8.0 A (Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

IR

5.0

100

Maximum Reverse Recovery Time (Note 1) Trr

35

Typical junction Capacitance (Note 2)

CJ

90

Typical Thermal Resistance (Note 3)

Operating Junction and Storage

Temperature Range

R JC

TJ, TSTG

2.0

-55 to + 150

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

1.7

V

μA

μA

nS

pF

℃/W

℃

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

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http://www.thinkisemi.com.tw/

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