2SD1291 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2SD1291

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SD1291

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

hFE

DC Current Gain

ICBO

Collector Cutoff Current

VECF

C-E Diode Forward Voltage

IC= 2.5A; VCE= 10V

VCB= 750V; IE= 0

VCB= 1500V; IE= 0

IF= 4A

Switching Times

5

V

5.0

V

1.5

V

4

12

50 μA

1.0 mA

2.2

V

ts

Storage Time

tf

Fall Time

IC= 2.5A; ILeak= 0.8A; LB= 5μH

8

μs

1

μs

SPTECH website：www.superic-tech.com

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