2N7002KU(2013) Просмотр технического описания (PDF) - KEC

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Компоненты Описание

производитель

2N7002KU
(Rev.:2013)

N Channel MOSFET

KEC 

SEMICONDUCTOR

TECHNICAL DATA

INTERFACE AND SWITCHING APPLICATION.

FEATURES

·ESD Protected 2000V.(Human Body Model)

·High density cell design for low RDS(ON).

·Voltage controlled small signal switch.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL RATING UNIT

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Continuous

Pulsed (Note 1)

Drain Power Dissipation (Note 2)

Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Ambient (Note 2)

Note 1) Pulse Width≦10㎲, Duty Cycle≦1%

Note 2) Surface Mounted on 2 ×2 FR4 Board

VDSS

VGSS

ID

IDP

PD

Tj

Tstg

RthJA

60

V

±20

V

300

mA

1000

270

mW

150

℃

-55～150 ℃

460 ℃/W

2N7002KU

N Channel MOSFET

E

M

B

2

1

N

K

M

DIM MILLIMETERS

DA

B

2.00+_ 0.20

1.25+_ 0.15

C

0.90+_ 0.10

3

D 0.3+0.10/-0.05

E

2.10 +_ 0.20

G

0.65

H 0.15+0.1/-0.06

J

1.30

K

0.00~0.10

L

0.70

H

M

0.42

N

0.10 MIN

N

1. SOURCE

2. GATE

3. DRAIN

USM

EQUIVALENT CIRCUIT

D

G

S

Marking

KU Type Name

Lot No.

2013. 7. 19

Revision No : 1

1/4

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