2N7002KWQ Просмотр технического описания (PDF) - Yangzhou yangjie electronic co., Ltd
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2N7002KWQ Datasheet PDF : 6 Pages
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2N7002KWQ
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
340mA
● RDS(ON)( at VGS=10V)
＜2.5ohm
● RDS(ON)( at VGS=4.5V)
＜3.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
● Moisture Sensitivity Level 1
● Epoxy meets UL-94 V-0 flammability rating and
halogen free
● Part no. with suffix “Q” means AEC-Q101
qualified
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface：TTL/CMOS
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TA=25℃ @ Steady State
TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RθJA
TJ ,TSTG
60
±20
340
272
1.5
350
357
-55～+150
V
V
mA
A
mW
℃/ W
℃
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
2N7002KWQ
F2
72K.
MINIMUM
PACKAGE(pcs)
3000
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
30000
120000
7“ reel
S-S2654
Rev.1.1,16-Apr-20
1/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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