STB3N60-1 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB3N60-1

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STB3NA60-1

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

STB3NA60-1

VDSS

600 V

RDS(on)

<4Ω

ID

2.9 A

PRELIMINARY DATA

s TYPICAL RDS(on) = 0.7 Ω

s AVALANCHE RUGGED TECHNOLOGY

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

123

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

I2PAK

TO-262

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 1996

Value

600

600

± 30

2.9

1.8

11.6

80

0.64

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

oC

oC

1/9

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